The first entries in Toshiba’s lineup of SiC MOSFETs that use a 4-pin TO-247-4L(X) package consist of 10 devices, 5 rated at 650 V and 5 rated at 1200 V. To minimize switching loss, their 4-pin TO-247 ...
A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...
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