Imagine trying to build a tower out of hundreds of very thin, slightly different sheets of material, where each sheet wants to bend or warp on its own. That’s essentially what researchers at imec and ...

TL;DR: Huawei is set to lead Apple by integrating high-performance HBM DRAM with 3D stacking technology in smartphones, boosting AI efficiency and bandwidth while reducing chip size. Apple plans to ...

Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.

At a memory conference this week, semiconductor giant Samsung updated its roadmap with several ambitious technologies. Those include 3D DRAM and stacked DRAM, which it says could arrive this decade.

The next generation of high-bandwidth memory, HBM4, was widely expected to require hybrid bonding to unlock a 16-high memory stack. A JEDEC move made that unnecessary with this generation, but it’s ...

SK Hynix has unveiled a long-term roadmap for next-generation DRAM technologies, laying out a vision that aims to drive sustainable innovation over the next 30 years as the global semiconductor ...

VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...

Showcase the technology of highly stackable oxide-semiconductor channel transistors Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable ...

After memory products like NAND Flash and DRAM, it's reported that Samsung Electronics will conduct R&D for a "3D stacking" technology that can vertically stack system semiconductor transistors.