Epitaxy is an important technique in crystallography where natural or artificial crystals are grown on a crystalline substrate; the underlying substrate acts as a seed crystal and determines the ...

This technique is significant in the development of advanced materials, particularly for applications in microelectronics, nanotechnology, optoelectronics, and renewable energy technologies. The ...

Germanium was the material of choice in the early history of electronic devices, and due to its high charge carrier mobility, it's making a comeback. It's generally grown on expensive single-crystal ...

New system extends ASM’s portfolio of industry benchmark single wafer silicon carbide epitaxy systems, the 6” PE1O6 and 8” PE1O8 systems, with a higher throughput, lower cost of ownership, dual ...

A groundbreaking study on van der Waals (vdW) epitaxy has introduced new possibilities in the production of wafer-scale, single-crystal molecular films, addressing a longstanding challenge in ...

This technique offers unparalleled control over the thickness, composition, and doping levels of the layers it produces, features that are critical for advanced electronic and photonic devices. The ...

A new technical paper titled “Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator” was published by researchers at Cardiff University and University of ...

Ion beam-assisted molecular beam epitaxy (IB-MBE) combines ion beam technology with MBE to enhance thin-film growth precision. This technique utilizes controlled energetic ions to modify physical ...