This technique is significant in the development of advanced materials, particularly for applications in microelectronics, nanotechnology, optoelectronics, and renewable energy technologies. The ...

A team led by researchers at Rensselaer Polytechnic Institute (RPI) has made a breakthrough in semiconductor development that could reshape the way we produce computer chips, optoelectronics and ...

A new technical paper titled “Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy” was published by researchers at Penn State University.

BUFFALO, N.Y. — Scientists have grown thin films of two different crystalline materials on top of each other using an innovative technique called “dative epitaxy.” The researchers discovered the ...

Pirouz, P. (2014). Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth. Materials Express, 4 (1), 41-53. Cowen, J., Lucas, L., Ernst, F ...

In a study published in Journal of the American Chemical Society, a team led by Prof. SONG Li from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences ...

Despite silicon carbide’s (SiC) promise over conventional silicon for the design of next-generation power electronics devices, broad adoption of this high-performance compound semiconductor has been ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing the need for crystalline substrates in epitaxy (Nanowerk Spotlight) The ...

Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has ...