Gallium Phosphide (GaP) epitaxy on silicon substrates represents a critical frontier in semiconductor heterointegration, combining the superior optoelectronic properties of III–V materials with ...

Silicon carbide (SiC) is a crystalline material utilized to develop a wide array of electronic devices, including transistors and other high-power, high-frequency, and high-temperature devices. As ...

Illustration of an intense laser pulse hitting a diamond crystal from top right, driving elastic and plastic waves (curved lines) through the material. The laser pulse creates linear defects, known as ...

In the quest to design more efficient solar cells and light-emitting diodes (LEDs), a team of engineers has analyzed different types of defects in the semiconductor material that enables such devices ...

Scientists have measured the mechanics of tiny crystalline ceramics. Materials are made of atoms, and if they are arranged periodically, they are called crystalline structures. If the size of these ...

One of the many challenges for the IC developers is to change the channel material to increase transistor mobility. But what about manufacturing? Can LED-style epitaxy be migrated to high-volume ...

New GPU-accelerated modeling reveals the hidden mechanics behind graphene’s AB-BA transitions and the defects that freeze them in place. Study: Phase-Field Crystal Method for Bilayer Graphene. Image ...