The US Department of Energy’s National Renewable Energy Laboratory (NREL) has identified a low-cost way to produce high-efficiency III-V solar cells with dynamic hydride vapor phase epitaxy (D-HVPE).

Sept 29 (Reuters) - Soitec Sa : * Announces sale of gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics subsidiary to Intelligent Epitaxy Technology Inc Source text for Eikon: ...

Taiwan-based Kinik Precision Grinding (KPG) has joined up with the Mechanical Industrial Research Laboratories (MIRL) of the Industrial Technology Research Institute (ITRI) to establish a new ...

GaAs IC foundries Win Semiconductors and Advanced Wireless Semiconductor Company (AWSC), and GaAs epi-wafer supplier Visual Photonics Epitaxy Company (VPEC) are all poised to log significant revenue ...

A team of researchers led by the UK’s University of Cambridge has developed an adhesive-free method of bonding ultra-thin gallium arsenide (GaAs) solar cells to borosilicate glass. The technique, ...

Researchers at Lund University, Sweden, have grown single continuous GaAs nanowires consisting of segments of pure wurtzite and zincblende phases. Using photoluminescence spectroscopy, they found that ...